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  vishay siliconix SIB437EDKT new product document number: 67402 s11-0235-rev. a, 14-feb-11 www.vishay.com 1 p-channel 8 v (d-s) mosfet product summary v ds (v) r ds(on) ( ? )i d (a) q g (typ.) - 8 0.034 at v gs = - 4.5 v - 9 a 10.5 nc 0.063 at v gs = - 1.8 v - 5 0.084 at v gs = - 1.5 v - 3 0.180 at v gs = - 1.2 v - 1 markin g code x x x b m x lot tracea b ility and date code part # code orderin g information: SIB437EDKT-t1-ge3 (lead (p b )-free and halogen-free) p-channel mosfet s d r g thin powerpak sc-75-6l-single d d g s s d d 1 2 3 4 5 6 1.60 mm 1.60 mm 0.60 mm notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the thin powerpak sc-75 is a leadless pac kage. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions is 105 c/w. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 8 v gate-source voltage v gs 5 continuous drain current (t j = 150 c) t c = 25 c i d - 9 a a t c = 70 c - 9 a t a = 25 c - 7.5 b, c t a = 70 c - 6 b, c pulsed drain current i dm - 25 continuous source-drain diode current t c = 25 c i s - 9 a t a = 25 c - 2 b, c maximum power dissipation t c = 25 c p d 13 w t c = 70 c 8.4 t a = 25 c 2.4 b, c t a = 70 c 1.6 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 5 s r thja 41 51 c/w maximum junction-to-case (drain) steady state r thjc 7.5 9.5 features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-75 package with ultra-thin 0.6 mm height - small footprint area - low on-resistance ? 100 % r g tested ? typical esd performance 2000 v ? built in esd protection with zener diode ? compliant to rohs directive 2002/95/ec applications ? load switch for portable devices ? load switch for low voltage gate drive
www.vishay.com 2 document number: 67402 s11-0235-rev. a, 14-feb-11 vishay siliconix SIB437EDKT new product notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 8 v v ds temperature coefficient ? v ds /t j i d = - 250 a - 2 mv/c v gs(th) temperature coefficient ? v gs(th) /t j 2.2 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.35 - 0.7 v gate-source leakage i gss v ds = 0 v, v gs = 5 v 5 a zero gate voltage drain current i dss v ds = - 8 v, v gs = 0 v - 1 v ds = - 8 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds ?? - 5 v, v gs = - 4.5 v - 15 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 3 a 0.028 0.034 ? v gs = - 1.8 v, i d = - 1 a 0.050 0.063 v gs = - 1.5 v, i d = - 0.5 a 0.060 0.084 v gs = - 1.2 v, i d = - 0.5 a 0.100 0.180 forward transconductance a g fs v ds = - 4 v, i d = - 3 a 14 s dynamic b total gate charge q g v ds = - 4 v, v gs = - 4.5 v, i d = - 7.4 a 10.5 16 nc gate-source charge q gs 1.5 gate-drain charge q gd 3.3 gate resistance r g f = 1 mhz 80 400 800 ? tu r n - o n d e l ay t i m e t d(on) v dd = - 4 v, r l = 0.7 ? i d ? - 6 a, v gen = - 4.5 v, r g = 1 ? 90 180 ns rise time t r 170 340 turn-off delay time t d(off) 690 1380 fall time t f 630 1260 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 9 a pulse diode forward current i sm - 25 body diode voltage v sd i s = - 6 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 6 a, di/dt = 100 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 12 25 nc reverse recovery fall time t a 12 ns reverse recovery rise time t b 18
document number: 67402 s11-0235-rev. a, 14-feb-11 www.vishay.com 3 vishay siliconix SIB437EDKT new product typical characteristics (25 c, unless otherwise noted) gate current vs. gate-source voltage output characteristics on-resistance vs. drain current 0.000 1.000 2.000 3.000 4.000 5.000 6.000 0 2 4 6 8 10 i gss - gate current (ma) v gs - gate-source voltage (v) t j = 25 c 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 1 v v gs = 2 v v gs = 5 v thru 2.5 v v gs = 1.5 v 0.00 0.04 0.08 0.12 0.16 0.20 0 5 10 15 20 25 r ds(on) - on-resistance () i d -drain current (a) v gs = 1.2 v v gs = 1.5 v v gs = 1.8 v v gs = 4.5 v gate current vs. gate-source voltage transfer characteristics gate charge 1.e-10 1.e-09 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 0 2 4 6 8 10 i gss - gate current (a) v gs - gate-to-source voltage (v) t j = 150 c t j = 25 c 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 1 2 3 4 5 6 0 3 6 9 12 15 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 6.4 v v ds = 4 v v ds = 2 v i d = 7.4 a
www.vishay.com 4 document number: 67402 s11-0235-rev. a, 14-feb-11 vishay siliconix SIB437EDKT new product typical characteristics (25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.8 0.9 1.0 1.1 1.2 1.3 - 50 - 25 0 25 50 75 100 125 150 r ds(on) -on-resistance (normalized) t j - junction temperature ( c) v gs = 1.8 v; i d = 1 a v gs = 1.5 v; i d = 0.5 a v gs = 1.2 v; i d = 0.5 a v gs = 4.5 v; i d = 3 a 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.0 1.0 2.0 3.0 4.0 5.0 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) i d = 0.5 a; t j = 125 c i d = 3 a; t j = 25 c i d = 3 a; t j = 125 c i d = 0.5 a; t j = 25 c 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0 soure-drain diode forward voltage threshold voltage safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j -temperature ( c) i d = 250 a 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied 100 ms limited by r ds(on) * 1 ms t single pulse a = 25 c bvdss limited 10 ms 1 s, 10 s dc 100 s
document number: 67402 s11-0235-rev. a, 14-feb-11 www.vishay.com 5 vishay siliconix SIB437EDKT new product typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 4 8 12 16 20 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power derating 0 3 6 9 12 15 25 50 75 100 125 150 t c - case temperat u re (c) r ( w ) e w o p
www.vishay.com 6 document number: 67402 s11-0235-rev. a, 14-feb-11 vishay siliconix SIB437EDKT new product typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67402 . normalized thermal transient im pedance, junction-to-ambient 1 0.1 0.01 normalized effective transient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) duty cycle = 0.5 single pulse 0.1 0.2 0.05 0.02 1. duty cycle, d = 2. per unit base = r thja = 105 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.1 square wave pulse duration (s) normalized ef fective t ransient thermal impedance duty cycle = 0.5 single pulse 0.02 0.05 0.1 0.2
document number: 67873 www.vishay.com revison: 11-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package information vishay siliconix case outline for thin ppak sc75 single note ? all dimensions are in millimeter ? package outline exculsive of mold flash and metal burr ? package outline inclusive of plating a1 detail z pin 1 pin 2 pin 3 pin 6 pin 5 pin 4 pin 1 dot by marking back s ide view of s ingle d e a b e e1 d1 c l z z d2 k1 k2 k3 e2 k4 k e3 millimeters inches dim. min. nom. max. min. nom. max. a 0.525 0.60 0.65 0.0206 0.024 0.026 a1 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 c 0.15 0.20 0.25 0.006 0.008 0.0010 d 1.53 1.60 1.70 0.060 0.063 0.067 d1 0.57 0.67 0.77 0.022 0.026 0.030 d2 0.10 0.20 0.30 0.004 0.008 0.012 e 1.53 1.60 1.70 0.060 0.063 0.067 e1 1.00 1.10 1.20 0.039 0.043 0.047 e2 0.20 0.25 0.30 0.008 0.010 0.012 e3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.65 bsc 0.020 bsc k 0.180 typ. 0.007 typ. k1 0.275 typ. 0.011 typ. k2 0.200 typ. 0.008 typ. k3 0.255 typ. 0.010 typ. k4 0.300 typ. 0.012 typ. l 0.15 0.25 0.35 0.006 0.010 0.014 ecn: c11-0404-rev. a, 11-apr-11 dwg: 5999
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.


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